Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone
نویسندگان
چکیده
9,10-phenanthrenequinone Sushobhan Avasthi, Yabing Qi, Grigory K. Vertelov, Jeffrey Schwartz, Antoine Kahn, and James C. Sturm Dept. of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA Dept. of Chemistry, Princeton University, Princeton, New Jersey 08544, USA Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544, USA
منابع مشابه
Electronic structure and band alignment of 9,10-phenanthrenequinone passivated silicon surfaces
a r t i c l e i n f o In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface...
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The electronically excited states of the Si(100) surface and acetylene, benzene, and 9,10-phenanthrenequinone adsorbed on Si(100) are studied with time-dependent density functional theory. The computational cost of these calculations can be reduced through truncation of the single excitation space. This allows larger cluster models of the surface in conjunction with large adsorbates to be studi...
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A density functional (DFT–GGA) study on the modification of the Si(001) surface optical response upon adsorption of 9,10-phenanthrenequinone and oxidation is presented. In the first case it is found that intramolecular p–p* transitions as well as adsorption-modified Si bulk states contribute to the optical signal. The molecular contributions differ strongly from the respective signals of gas-ph...
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